IR properties of SiO deposited on V1-xWxO2 thermochromic films by vacuum evaporation

Citation
M. Tazawa et al., IR properties of SiO deposited on V1-xWxO2 thermochromic films by vacuum evaporation, THIN SOL FI, 375(1-2), 2000, pp. 100-103
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
375
Issue
1-2
Year of publication
2000
Pages
100 - 103
Database
ISI
SICI code
0040-6090(20001031)375:1-2<100:IPOSDO>2.0.ZU;2-1
Abstract
In our previous report [Thin Solid Films 281-282 (1996) 232], we designed a new spectral selective radiating material (SSRM) which consists of an SiO film as outer layer, a V1-xWxO2 thermochromic (TC) film as intermediate lay er and blackbody as the substrate, respectively. This SSRM can attain a sta ble surface temperature that can be controlled by varying the value of x of V1-xWxO2, namely the transition temperature, T-c from the metal to semicon ductor phase. In this paper, we report deposition of a SiO him on a V1-xWxO 2 film on glass substrate and its LR spectral reflectance at lower and high er temperature than T-c. We also report an estimated radiative cooling powe r of the SSRM based on the measured IR spectral reflectance and a discussio n concerning the temperature stability of the SSRM. (C) 2000 Elsevier Scien ce S.A. All rights reserved.