In our previous report [Thin Solid Films 281-282 (1996) 232], we designed a
new spectral selective radiating material (SSRM) which consists of an SiO
film as outer layer, a V1-xWxO2 thermochromic (TC) film as intermediate lay
er and blackbody as the substrate, respectively. This SSRM can attain a sta
ble surface temperature that can be controlled by varying the value of x of
V1-xWxO2, namely the transition temperature, T-c from the metal to semicon
ductor phase. In this paper, we report deposition of a SiO him on a V1-xWxO
2 film on glass substrate and its LR spectral reflectance at lower and high
er temperature than T-c. We also report an estimated radiative cooling powe
r of the SSRM based on the measured IR spectral reflectance and a discussio
n concerning the temperature stability of the SSRM. (C) 2000 Elsevier Scien
ce S.A. All rights reserved.