The degradation of TiN films on Cu substrates at high temperature under controlled atmosphere

Citation
Fh. Lu et al., The degradation of TiN films on Cu substrates at high temperature under controlled atmosphere, THIN SOL FI, 375(1-2), 2000, pp. 123-127
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
375
Issue
1-2
Year of publication
2000
Pages
123 - 127
Database
ISI
SICI code
0040-6090(20001031)375:1-2<123:TDOTFO>2.0.ZU;2-C
Abstract
This research employed TiN as a model system to study the degradation of ce ramic films at high temperature under controlled atmosphere. The TiN films were prepared on Cu substrates by a cathodic are plasma deposition techniqu e. The degradation of TiN films on the Cu substrates at high temperature un der controlled atmosphere was investigated using X-ray photoelectron spectr oscopy and scanning electron microscopy/energy dispersive spectroscopy. Ann ealing was performed in the flowing gases including air, nitrogen, argon, a nd N-2/H-2 = 9 gas mixtures, which possess different nitrogen and oxygen pa rtial pressures. The degradation of the films at high temperature results m ainly in color changes associated with the presence of TiO2 and formation o f thermally induced fracture of the films. The degradation diagrams at vari ous annealing temperatures and times in the controlled atmosphere were succ essfully generated. The driving force of the oxidation, i.e. the Gibbs free energy change for TiN and TiO2, was discussed. The thermal stress which in duced the fracture of the film was also analyzed. (C) 2000 Elsevier Science S.A. All rights reserved.