P. Jin et al., Epitaxial growth of W-doped VO2/V2O3 multilayer on alpha-Al2O3(110) by reactive magnetron sputtering, THIN SOL FI, 375(1-2), 2000, pp. 128-131
Multilayer epitaxy with a W-VO2 top layer over a bottom layer of which the
crystal phase depends on the starting oxygen flow, was done on alpha -Al2O3
(110) by reactively sputtering a V-W (1.6 at.% wt.) alloy target at linearl
y increasing oxygen flow without interrupting film growth. For the film dep
osited in the oxygen flow from 10 to 26 sccm, a W-VO2/W-V2O3 multilayer was
formed on alpha -Al2O3(110) with the epitaxial relationship being (001)(f)
//(110)(s), (110)//(001)(s) for W-V2O3, and (010)(f)//(110)(s), (100)(f)//(
001)(s) for W-VO2 where f and s denote the film and substrate, respectively
. The formation of a triple domain structure was confirmed in the W-VO2 top
layer due to the strong influence from the symmetry of the substrate. The
multilayer shows phase transition behavior differing from the single layer
film, which was presumably due to the effects of W-doping, compositional gr
adient, and strain. (C) 2000 Elsevier Science S.A. All rights reserved.