Preparation and electric properties of SrBi2Ta2O9 thin films by MOD method

Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9 (SBT) capacitors were measured wit h HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant epsilon (r)(f) and ac conductivity sigma>(*) over bar * (f) of SET thin firms had a power law dependence on frequency. An increas e in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SET capacitors in the first stage. The dielectr ic constant and ac conductivity were dependent on the thickness, temperatur e, grain size, and annealing ambient, etc. of the SET thin films. (C) 2000 Elsevier Science S.A. All rights reserved.