Studies on the retention behavior of SrBi2Ta2O9 thin films

The retention properties of SrBi2Ta2O9 (SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing o f the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained pol arization. However, the polarization loss is found to be different with var ious write/read voltages over a range of 1-30 000 s. The effect of ultra-vi olet irradiation on SET retention is also to be investigated. Experiments i ndicate that there was weak pinning of domain walls existing in SET. (C) 20 00 Elsevier Science S.A. All rights reserved.