Ternary boron carbonitride (BCN) thin films were prepared by radio frequenc
y reactive sputtering method from a hexagonal (h-) BN target in an Ar-CH4 d
ischarge. The films with different C contents were obtained by varying the
CH, partial pressure. The samples were characterized by X-ray diffraction,
Fourier transform infrared spectroscopy, and X-ray photoelectron spectrosco
py. The results suggest that the material is not a simple mixture of h-BN a
nd graphite. The samples deposited under the optimum conditions are polycry
stalline BC2N. With increasing CH, partial pressure, more B atoms prefer to
combine with C atoms. The temperature dependent conductivity of the films
deposited at 10% CH4 partial pressure follows the Arrhenius relation; the c
orresponding activation energy is approximately 0.8 eV. (C) 2000 Elsevier S
cience S.A. All rights reserved.