Ternary BCN thin films deposited by reactive sputtering

Citation
Js. Yue et al., Ternary BCN thin films deposited by reactive sputtering, THIN SOL FI, 375(1-2), 2000, pp. 247-250
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
375
Issue
1-2
Year of publication
2000
Pages
247 - 250
Database
ISI
SICI code
0040-6090(20001031)375:1-2<247:TBTFDB>2.0.ZU;2-B
Abstract
Ternary boron carbonitride (BCN) thin films were prepared by radio frequenc y reactive sputtering method from a hexagonal (h-) BN target in an Ar-CH4 d ischarge. The films with different C contents were obtained by varying the CH, partial pressure. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectrosco py. The results suggest that the material is not a simple mixture of h-BN a nd graphite. The samples deposited under the optimum conditions are polycry stalline BC2N. With increasing CH, partial pressure, more B atoms prefer to combine with C atoms. The temperature dependent conductivity of the films deposited at 10% CH4 partial pressure follows the Arrhenius relation; the c orresponding activation energy is approximately 0.8 eV. (C) 2000 Elsevier S cience S.A. All rights reserved.