The FeSi/Cu multilayer materials (MLM), as well as the as-deposited FeSi th
in film, were prepared by the electron beam physical vapor deposition (EB-P
VD) technique. The as-deposited FeSi had a b.c.c (alpha -Fe) structure with
a Si concentration of approximately 6.1 wt.%. The lattice spacing of FeSi
in MLM increased with a decrease in FeSi layer thickness. The saturation ma
gnetization (4 pi MS) Of FeSi/Cu MLM depended on the thickness of the FeSi
layer and was found to be 1.75 T when the FeSi layer was thicker than 70 nm
, showing a similar value to that of FeSi thin him. Specific saturation mag
netization per mg (sigma (s)) of FeSi increases sharply with decreasing FeS
i layer thickness and even exceed that of pure Fe when the FeSi layer thick
ness is lower than 40 nm. The lowest value of coercivity appeared when the
FeSi layer thickness was 116 nm. Resistivity was proportional to FeSi layer
thickness, and was twice as great as that of Fe-6.5 wt.%Si alloy when the
layer thickness is 174 nm. (C) 2000 Elsevier Science S.A. All rights reserv
ed.