a-Si : H film deposition using same phase modulated scanning plasma method

The effects of a magnetic field perpendicular to a discharge electric field (cross-magnetic field) and their modulation phase are discussed in a plasm a enhanced chemical vapor deposition (PECVD) system as important external c ontrol parameters for the preparation of hydrogenated amorphous silicon (a- Si:H) using silane (SiH4) plasmas. In this paper, a-Si:H thin films are pre pared under the conditions of the same and random phase modulations of an e lectric field (E) and a magnetic field (B). The effects of removal and grow th suppression on silicon particles owing to the same phase modulation of E and B fields can suppress the disorder parameter and the surface roughness of the deposited films. (C) 2000 Elsevier Science S.A. All rights reserved .