Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model

Authors
Lahbabi, M Ahaitouf, A Abarkan, E Fliyou, M Hoffmann, A Charles, JP Bhuva, BL Kerns, SE Kerns, DV
Citation
M. Lahbabi et al., Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model, APPL PHYS L, 77(20), 2000, pp. 3182-3184
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
20
Year of publication
2000
Pages
3182 - 3184
Database
ISI
SICI code
0003-6951(20001113)77:20<3182:AOESOS>2.0.ZU;2-B
Abstract
Light emission from a p-n junction biased in avalanche breakdown has been m odeled over the range 1.4-3.4 eV. The model emphasizes indirect interband p rocesses and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the mo del is simple, accurate, and consistent with fundamental physical device ch aracteristics. (C) 2000 American Institute of Physics. [S0003- 6951(00)0344 6-X].