Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

Citation
Jw. Johnson et al., Gd2O3/GaN metal-oxide-semiconductor field-effect transistor, APPL PHYS L, 77(20), 2000, pp. 3230-3232
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
20
Year of publication
2000
Pages
3230 - 3232
Database
ISI
SICI code
0003-6951(20001113)77:20<3230:GMFT>2.0.ZU;2-K
Abstract
Gd2O3 has been deposited epitaxially on GaN using elemental Gd and an elect ron cyclotron resonance oxygen plasma in a gas-source molecular beam epitax y system. Cross-sectional transmission electron microscopy shows a high con centration of dislocations which arise from the large lattice mismatch betw een the two materials. GaN metal-oxide-semiconductor field-effect transisto rs (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 an d amorphous SiO2 show modulation at gate voltages up to 7 V and are operati onal at source drain voltages up to 80 V. This work represents demonstratio ns of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric. (C) 2000 American Institute of Physics. [S0003-695 1(00)03746-3].