Stress-free two-way thermoelastic shape memory and field-enhanced strain in Ni52Mn24Ga24 single crystals

Citation
Wh. Wang et al., Stress-free two-way thermoelastic shape memory and field-enhanced strain in Ni52Mn24Ga24 single crystals, APPL PHYS L, 77(20), 2000, pp. 3245-3247
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
20
Year of publication
2000
Pages
3245 - 3247
Database
ISI
SICI code
0003-6951(20001113)77:20<3245:STTSMA>2.0.ZU;2-R
Abstract
Stress-free and two-way thermoelastic shape memory, with 1.2% strain and 6 K temperature hysteresis, has been found in single crystalline Ni52Mn24Ga24 . The deformation can be enhanced more than three times, up to 4.0% shrinka ge with a bias field 1.2 T applied along the measurement direction, or chan ged to 1.5% expansion by the 1.2 T applied perpendicular to the measurement direction. For achieving a large deformation, the magnetic field exhibits a more evident contribution than an external stress on this material. These characteristics can be attributed to the low level of internal stress and the preferential orientation of the martensitic variants. (C) 2000 American Institute of Physics. [S0003- 6951(00)02246-4].