Domain nucleation and relaxation kinetics in ferroelectric thin films

Citation
Cs. Ganpule et al., Domain nucleation and relaxation kinetics in ferroelectric thin films, APPL PHYS L, 77(20), 2000, pp. 3275-3277
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
20
Year of publication
2000
Pages
3275 - 3277
Database
ISI
SICI code
0003-6951(20001113)77:20<3275:DNARKI>2.0.ZU;2-E
Abstract
The time-dependent relaxation of the remanent polarization in epitaxial lea d zirconate titanate (PbZr0.2Ti0.8O3) ferroelectric thin films, containing a uniform two-dimensional grid of 90 degrees domains (c axis in the plane o f the film), is examined using piezoresponse microscopy. The 90 degrees dom ain walls preferentially nucleate the 180 degrees reverse domains during re laxation, with a significant directional anisotropy. Relaxation occurs thro ugh the nucleation and growth of reverse domains, which subsequently coales ce and consume the entire region as a function of time. (C) 2000 American I nstitute of Physics. [S0003-6951(00)03444-6].