Several well-characterized HgBa2CuO4+delta samples were annealed under
various conditions. Above 300-degrees-C and at various oxygen partial
pressures, both reversible oxygen intake/release and irreversible Hg-
loss take place with different time constants. By choosing the proper
annealing temperature T(a), oxygen pressure (P(O2) and annealing time
t, the Hg-loss effects were negligible and the bulk superconducting tr
ansition temperature T(c) was reversibly changed with delta from 0 K o
n the underdoped side (an insulator) through a peak of 97 K, then down
to approximately 20 K on the overdoped side. The measured 3D variatio
n of T(c) vs. (1/T(a), ln P(O2) appears as a parabolic surface with is
o-T(c) segments projected on a 2D 1/T(a)-ln P(O2) plane as straight li
nes. The slope [partial derivative ln P(O2)/partial derivative(1/T(a))
]T(c) of the projections corresponds to the oxidation enthalpy DELTAH,
and the derivative (partial derivative ln P(O2)/partial derivativeT(c
))T(a), which is a measure of the T(c) variation with the oxygen parti
al pressure used in the annealing, is related to the defect-interactio
ns and the T(c)-delta correlation. The data for YBa2Cu3O7-delta, Bi2Sr
2CaCu2O8+delta, and HgBa2CuO4+delta are compared.