We review the current status of research activity on ZnSe-based heterostruc
tures for blue-green laser diodes (LDs), focusing on a few selected critica
l issues. Early investigations on defect microstructures allowed to strongl
y enhance the lifetime of LDs. However, the LD lifetime seems to saturate n
ow, and we point out that the model proposed for explaining the degradation
of LD does not predict such a saturation. Next, we detail the mechanisms r
esponsible for carrier compensation in p-type ZnSe and we survey the proper
ties of ZnMgSSe and ZnMgBeSe wide bandgap quaternary alloys which are used
as cladding layers in LDs. We emphasize that the low p-type dopability of Z
nSe and related materials has a dramatic impact on the performance of LDs i
n terms of emitted wavelength as well as device lifetime. (C) 2000 Academie
des sciences/Editions scientifiques et medicales Elsevier SAS.