ENGINEERING THE I-V CHARACTERISTICS OF AN ASYMMETRIC DOUBLE-BARRIER DEVICE WITH VARIABLE PERIOD GAAS ALAS SUPERLATTICE INJECTORS/

This study represents a first-time examination of an asymmetric double barrier structure using variable period superlattice emitters. The la yer thickness and period of the superlattices were systematically vari ed in order to define a unique emitter state in each structure grown. In each case, the emitter state was determined theoretically by calcul ating the miniband formation in the constituting superlattice. The rel ationship between the emitter state defined by the superlattice struct ure parameters and the current-voltage behavior of the diode at 77 K h as been investigated here. (C) 1997 Elsevier Science S.A.