Bg. Jeon et al., A 0.4-mu m 3.3-v 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit, IEEE J SOLI, 35(11), 2000, pp. 1690-1694
A 0.4-mum 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (F
RAM) was developed, The FRAM relies on the use of a reference scheme optima
lly adapted to the entire cell population of an individual device. A simple
voltage level detector protects the device against data loss during drops
in supply voltage. Finally a special test mode was implemented to optimize
read pulse width, By using these techniques, a high-performance 1T1C 4-Mb F
RAM was successfully developed.