A 0.4-mu m 3.3-v 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Authors
Jeon, BG Choi, MK Song, Y Oh, SK Chung, Y Suh, KD Kim, K
Citation
Bg. Jeon et al., A 0.4-mu m 3.3-v 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit, IEEE J SOLI, 35(11), 2000, pp. 1690-1694
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
35
Issue
11
Year of publication
2000
Pages
1690 - 1694
Database
ISI
SICI code
0018-9200(200011)35:11<1690:A0M314>2.0.ZU;2-6
Abstract
A 0.4-mum 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (F RAM) was developed, The FRAM relies on the use of a reference scheme optima lly adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally a special test mode was implemented to optimize read pulse width, By using these techniques, a high-performance 1T1C 4-Mb F RAM was successfully developed.