An integrated 16 x 16 PVDF pyroelectric sensor array

This paper presents a fully integrated PVDF-on-silicon pyroelectric sensor array. The pyroelectric sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technolog y. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing pyroelectric sensor is a three-layer stack , consisting of a conductive polymer as an absorber layer and front electro de, a thin PVDF film as the pyroelectric material, and a rear metal layer a cting as a reflector layer and rear electrode. The manufacture of the pyroe lectric sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS proce ss. The array has an average pixel voltage sensitivity of 2200 V/W at 100 H z, an NEP of 2.4 x 10(-11) W/root>(*) over bar * (Hz at 100 Hz, and a speci fic detectivity of 4.4 x 10(8) cm root Hz/W at 100 Hz.