Effect of magnetic field on surface polaron states in dopped semiconductor

Citation
S. Madkour et Si. Beril, Effect of magnetic field on surface polaron states in dopped semiconductor, I J PA PHYS, 38(8), 2000, pp. 595-598
Citations number
12
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
38
Issue
8
Year of publication
2000
Pages
595 - 598
Database
ISI
SICI code
0019-5596(200008)38:8<595:EOMFOS>2.0.ZU;2-5
Abstract
Effect of magnetic field on surface polaron states in a polar crystal inter face are studied theoretically. It is shown that the presence of magnetic f ield leads to a local potential for charge carriers at the interface.