Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate

Authors
Otsuka, N Tsujimura, A Hasegawa, Y Sugahara, G Kume, M Ban, Y
Citation
N. Otsuka et al., Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate, JPN J A P 2, 39(5B), 2000, pp. L445-L448
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
39
Issue
5B
Year of publication
2000
Pages
L445 - L448
Database
ISI
SICI code
Abstract
Room-temperature deep-ultraviolet emission has been observed from Al0.13Ga0 .87N/Al0.10Ga0.90N double heterostructure tight-emitting diodes (LEDs) on ( 0001)-oriented sapphire substrate. By introducing undoped barrier layers, w hich sandwich the active layer, the LED was operated at a peak emission wav elength of 339 nm with a narrow linewidth of 5.6 nm. The dependence of emis sion intensity on injection current suggests that the nonradiative recombin ation was suppressed and the diffusion current for the recombination proces s was dominant at the injection current of over 20 mA.