Reciprocal space mapping of ordered domains in InxGa1-xP

We applied high resolution x-ray diffraction techniques to determine the th ree dimensional domain shape in nominally lattice-matched, CuPtB ordered, I nxGa1-xP epitaxial layers deposited on GaAs by metal organic vapor phase ep itaxy. A technique of reciprocal space mapping is described which provides three-dimensional information on the shape and size of the ordered domains. The domain shape is obtained by reciprocal space mapping along orthogonal crystallographic directions. Applying this technique shows that, at large m iscut angles, the domains are oriented close to the growth direction, and a re elongated by differing extents along the [110] and [110].