Si-Ge single crystals up to 68 mm diameter and up to 17 at.% germanium were
grown using a modified Czochralski technique. Pre-grown large diameter sin
gle crystal silicon seeds with various crystallographic orientations were u
sed as templates for solidification to reduce cap crystallization time and
to ensure single crystallinity at desired crystal diameters. A discussion i
s presented of the influences of seed preparation, crystal growing paramete
rs and post-growth processing on the Si-Ge bulk single crystals produced us
ing this new technique. The modified Czochralski technique described in thi
s paper is ultimately intended for the manufacture of 100-200 mm diameter S
i-Ge substrates.