Bulk single crystal growth of silicon-germanium

Citation
Rh. Deitch et al., Bulk single crystal growth of silicon-germanium, J ELEC MAT, 29(9), 2000, pp. 1074-1078
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
9
Year of publication
2000
Pages
1074 - 1078
Database
ISI
SICI code
0361-5235(200009)29:9<1074:BSCGOS>2.0.ZU;2-K
Abstract
Si-Ge single crystals up to 68 mm diameter and up to 17 at.% germanium were grown using a modified Czochralski technique. Pre-grown large diameter sin gle crystal silicon seeds with various crystallographic orientations were u sed as templates for solidification to reduce cap crystallization time and to ensure single crystallinity at desired crystal diameters. A discussion i s presented of the influences of seed preparation, crystal growing paramete rs and post-growth processing on the Si-Ge bulk single crystals produced us ing this new technique. The modified Czochralski technique described in thi s paper is ultimately intended for the manufacture of 100-200 mm diameter S i-Ge substrates.