Bulk single crystal growth of silicon-germanium

Si-Ge single crystals up to 68 mm diameter and up to 17 at.% germanium were grown using a modified Czochralski technique. Pre-grown large diameter sin gle crystal silicon seeds with various crystallographic orientations were u sed as templates for solidification to reduce cap crystallization time and to ensure single crystallinity at desired crystal diameters. A discussion i s presented of the influences of seed preparation, crystal growing paramete rs and post-growth processing on the Si-Ge bulk single crystals produced us ing this new technique. The modified Czochralski technique described in thi s paper is ultimately intended for the manufacture of 100-200 mm diameter S i-Ge substrates.