Etch characteristics of GaN and BN materials in chlorine-based plasmas

Citation
N. Medelci et al., Etch characteristics of GaN and BN materials in chlorine-based plasmas, J ELEC MAT, 29(9), 2000, pp. 1079-1083
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
29
Issue
9
Year of publication
2000
Pages
1079 - 1083
Database
ISI
SICI code
0361-5235(200009)29:9<1079:ECOGAB>2.0.ZU;2-2
Abstract
Reactive ion etching (RIE) was performed on GaN and BN thin films using chl orine-based plasmas. The optimum chemistry was found to be BCl3/Cl-2/N-2/Ar and Cl-2/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) ana lysis of the GaN and BN etched surfaces show a decrease in the surface nitr ogen atomic composition and an increase in chlorine impurity incorporation with increasing self-de bias. A photo-assisted RIE (PA-PIE) process using a n IR filtered Xe lamp beam was then used and resulted in improved etch rate s and surface composition. Optical emission spectroscopy (OES) measurements have also shown photoenhancement of the etch process.