Reactive ion etching (RIE) was performed on GaN and BN thin films using chl
orine-based plasmas. The optimum chemistry was found to be BCl3/Cl-2/N-2/Ar
and Cl-2/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray
photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) ana
lysis of the GaN and BN etched surfaces show a decrease in the surface nitr
ogen atomic composition and an increase in chlorine impurity incorporation
with increasing self-de bias. A photo-assisted RIE (PA-PIE) process using a
n IR filtered Xe lamp beam was then used and resulted in improved etch rate
s and surface composition. Optical emission spectroscopy (OES) measurements
have also shown photoenhancement of the etch process.