Electronic structure and interface formation during nickel deposition on polycrystalline aluminum

Citation
C. Palacio et A. Arranz, Electronic structure and interface formation during nickel deposition on polycrystalline aluminum, J PHYS CH B, 104(41), 2000, pp. 9647-9652
Citations number
40
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
104
Issue
41
Year of publication
2000
Pages
9647 - 9652
Database
ISI
SICI code
1520-6106(20001019)104:41<9647:ESAIFD>2.0.ZU;2-D
Abstract
The deposition of nickel on polycrystalline aluminum substrates has been st udied at room temperature by X-ray photoelectron spectroscopy (XPS), angle- resolved X-ray photoelectron spectroscopy (ARXPS), and valence band X-ray p hotoelectron spectroscopy (VBXPS). The growth of the nickel on the aluminum surface has been found to occur in two stages: Formation of NiAlx (x appro ximate to 0.45) islands 10 ML thick up to a coverage theta (NiAlx) = 0.7, f ollowed by the formation of metallic nickel islands with constant thickness of 8 ML that grow over the intermetallic islands previously formed. The si multaneous lateral growth of both kinds of islands is also observed during the second stage. During the first stage, the VBXPS spectra suggest a net c harge transfer from nickel to aluminum with the sequential formation of NiA l3, Ni2Al3, NiAl, and Ni3Al phases.