Preparation of boron and boron phosphide films by photo- and thermal chemical vapor deposition processes

We have calculated first excitation energies, oscillator strengths, and pot ential energy surfaces of B2H6 and PH3 by using an ab initio molecular orbi tal method to confirm that the deuterium lamp is effective for the excitati on of both B2H6 and PH, in the photo-chemical vapor deposition (photo-CVD) process. The deuterium lamp is useful for growing the film at 600-1000 degr eesC in the B2H6-PH3-H-2 system. The activation energies for film growth fo r thermal CVD decrease by using the deuterium lamp. Boron phosphide film gr ew epitaxially on Si(100) plane with a deuterium lamp at lower temperature than by thermal CVD at 100 degreesC, The electrical properties of boron and boron phosphide films on silica glass were improved by deuterium, (C) 2000 Academic Press.