Preparation and thermoelectric property of boron thin film

Boron thin films were deposited by electron beam evaporation and by pyrolys is of decaborane on quartz substrates. Reflection electron beam diffraction was used to characterize the crystal structure, The amorphous structure wa s observed for the film deposited by electron beam evaporation, The film wa s polycrystalline alpha -rhombohedral boron when the film was deposited by pyrolysis, All samples showed p-type conduction. The conductance of the fil m deposited by electron beam evaporation decreased linearly against T-4, Li near relation was observed in the log a against T-1 plot for the film depos ited by pyrolysis, The thermoelectric power of the film deposited by electr on beam evaporation decreased from 500 to 300 muV/K as the temperature incr eased from 300 to 800 K, The power factor increased from 10(-9) to 10(-6) V -2-Omega K--1(-2) cm(-1) with increasing temperature from 300 to 800 K, (C) 2000 Academic Press.