Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability

In this paper we present experimental results of dynamic thermal mapping on a new class of low-voltage high-current power MOS transistors. Moreover, w e have developed an electro-thermal simulation tool in order to analyze and understand the causes that can determine the temperature instabilities obs erved in these devices. Experimental results indicated that, similarly to p ower BJTs, also in this class of devices the hot-spot phenomenon occurs. Th e experimental set-up, based on a InSb single sensor, is able to achieve a high time resolution (less than 10 mus), high spatial resolution (less than 10 mum on 5 x 5 cm(2) active areas) and good temperature resolution (less than 0.1 degreesC). (C) 2000 Elsevier Science Ltd. All rights reserved.