Influence of electrothermal interactions on nonisothermal small-signal parameters of BJTs in ICs

Authors
Stepowicz, WJ Zarebski, J
Citation
Wj. Stepowicz et J. Zarebski, Influence of electrothermal interactions on nonisothermal small-signal parameters of BJTs in ICs, MICROELEC J, 31(9-10), 2000, pp. 759-764
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
31
Issue
9-10
Year of publication
2000
Pages
759 - 764
Database
ISI
SICI code
0026-2692(200009/10)31:9-10<759:IOEION>2.0.ZU;2-Q
Abstract
The electrothermal interactions affect the d.c. and a.c. characteristics of semiconductor devices and ICs. In discrete BJTs the selfheating phenomenon leads to the electrical inertia caused by the thermal inertia, what makes the a.c. small-signal parameters to be complex at low and very low frequenc ies. In bipolar ICs, apart from the selfheating,the mutual thermal interact ions between BJTs take place, and so they modify the a.c. small-signal para meters of the devices as well. (C) 2000 Elsevier Science Ltd. All rights re served.