An-Si eutectic alloy formation by Si implantation in polycrystalline Au

Different doses of high-energy Si (0.2-4.5 MeV) were implanted in polycryst alline Au foils (35 mum thick) to form a low melting point Au-Si alloy whic h can be used for gold soldering. A Au-Si eutectic structure has been obser ved in the implanted Au foils after annealing at 400 degreesC for I h, The Au-Si liquid phase was diffused in the polycrystalline Au foil along the gr ain boundaries which were flattened by the initial rolling procedure. The p resence of this eutectic alloy was also observed on the back of the Au foil . Nuclear (d,p) reactions induced by deuterons have been used to measure th e concentration of the implanted Si in various depths in the Au foils. RES was also used as a complementary technique to probe the Au concentration. S EM pictures indicate that an eutectic structure was induced in the implante d samples. (C) 2000 Elsevier Science B.V. All rights reserved.