Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer

Citation
M. Yandouzi et al., Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer, PHIL MAG L, 80(11), 2000, pp. 719-724
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
80
Issue
11
Year of publication
2000
Pages
719 - 724
Database
ISI
SICI code
0950-0839(200011)80:11<719:ENTFON>2.0.ZU;2-T
Abstract
Epitaxial nanoscale [001] films of NixAl100-x (x = 52.5) have been prepared by physical vapour deposition on to a thin him of Ag [001] on NaCl (001) f aces with occasional hillocks. The Ag film contains numerous dislocations a nd stacking faults and has a rms surface roughness of 2 nm. The Ni-Al film is ordered in the B2 structure and reveals many dislocations as well as ant iphase boundaries between ordered domains. The formation of subgrains in th e Ni-Al film results in severe height variations up to 30 nm across the sur face. A cross-sectional model for the growth of both films is presented.