Structural and photoelectrical properties of sprayed beta-In2S3 thin films

beta -In2S3 thin films have been prepared by the spray pyrolysis technique. X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) mi crographs showed a good homogeneity of these layers. Microanalysis and XPS measurements have detected little oxygen in the films present in In2O3 form . Photoconductivity measurements were carried out within the range of wavel engths in the visible spectrum at different modulation frequencies f and bi as voltages V ranging from 5 to 300 Hz and from 3 to 25 V, respectively. Th e band gap energy E-g, deduced from these spectra, has approximately the sa me value as that obtained from spectrophotometric transmission and reflecti on measurements (E-g = 2.05 eV).