Laser and thermal annealing effects on the optical properties of n-GaAs [100] crystals: Application to its Schottky diodes

Measurements of optical absorption, reflectance and transmittance propertie s have been made experimentally on [100] n-GaAs crystals to study the effec ts of laser and thermal annealings on these materials. Experimental evidenc e of the deterioration of the absorption coefficient alpha has bean observe d as a function of the photon energy for different laser power densities: 1 2, 24, 36 and 48 mW/cm(2) and for different thermal annealing temperatures in the ranges: 77 K and 20 to 200 degreesC. The influence of these effects has been observed in the characteristics of GaAs Schottky diode as well.