Crystal structure, electric and magnetic properties, and Raman spectroscopy of Gd3RuO7

Citation
Rp. Bontchev et al., Crystal structure, electric and magnetic properties, and Raman spectroscopy of Gd3RuO7, PHYS REV B, 62(18), 2000, pp. 12235-12240
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
18
Year of publication
2000
Pages
12235 - 12240
Database
ISI
SICI code
0163-1829(20001101)62:18<12235:CSEAMP>2.0.ZU;2-S
Abstract
A member of the R3MO7 family containing two magnetic cations, Gd3RuO7, has been synthesized by high-temperature solid-state reaction. The structure ha s been determined by single-crystal methods: space group Cmcm(#63), a(0)=10 .643(2) Angstrom, b(0)=7.345(1) Angstrom, c(0)=7.380(1) Angstrom, V=576.90( 14) Angstrom (3), Z=4, R1 =0.021, wR2=0.047. The most important structural feature is the one-dimensional RuO6 chain running parallel to the c axis. L n a wide temperature range the conductivity of Gd3RuO7 follows the dependen ce ln(rho)proportional toT(-1/2), which is typical for Mott variable-range hopping of localized carriers in one dimension. The magnetic susceptibility obeys the Curie-Weiss law with theta (p)= -7.5 K and Curie constant C-mol= 25 emu K/mole. Magnetization data reveal two successive transitions at abou t 14.5 and 8 K, which indicates independent ordering of Ru and Gd moments, respectively. The analysis shows that in total 27 (8A(g) + 8B(1g) + 5B(2g) +6B(3g)) Raman-active modes are expected for Gd3RuO7. As a larger number of A(g) lines (10) are observed in the polarized Raman spectra, we suggest th at two of the A(g) lines (at 233 and 780 cm(-1)) either arise from local vi brations or are of nonphonon origin.