Magnetic anisotropy and domain duplication in transport properties of tunnel junctions

Citation
M. Hehn et al., Magnetic anisotropy and domain duplication in transport properties of tunnel junctions, PHYS REV B, 62(17), 2000, pp. 11344-11346
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
17
Year of publication
2000
Pages
11344 - 11346
Database
ISI
SICI code
0163-1829(20001101)62:17<11344:MAADDI>2.0.ZU;2-O
Abstract
A tunnel magnetoresistance signal is used for probing the relative orientat ions of the local magnetization in the two magnetic electrodes of a tunnel junction. Minor magnetoresistance loops are studied as a function of the re turn field in order to change the domain configuration of the hard layer. D omain structure duplication of the hard layer template into the soft layer is observed. This effect is shown to be driven by the magnetic anisotropy o f the hard layer. Reducing this anisotropy leads to domain duplication but with effects nondiscernible in the tunnel magnetoresistance (TMR) signal. H owever, a signature of the 360 degrees domain walls is then observed on the TMR signal.