Metallic conduction and low-field giant magnetoresistance in the highly Mn4+-doped compound La1/3Ba2/3MnO3

Citation
Sl. Yuan et al., Metallic conduction and low-field giant magnetoresistance in the highly Mn4+-doped compound La1/3Ba2/3MnO3, PHYS REV B, 62(17), 2000, pp. 11347-11350
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
17
Year of publication
2000
Pages
11347 - 11350
Database
ISI
SICI code
0163-1829(20001101)62:17<11347:MCALGM>2.0.ZU;2-D
Abstract
Transport measurements are performed for the highly Mn4+-doped compounds La 1/3Bu2/3MnO3 (B = Ca, Sr, Ba). Different from La-1/3(Ca/Sr)(2/3)MnO3 in whi ch a transition to a charge-ordered state occurs at low temperatures, La1/3 Ba2/3MnO3 undergoes a semiconductor-metal transition at T-p (2) over tilde 30 K upon cooling and the low-temperature metallic resistivity is dominated by a quadratic contribution. The application of relatively low magnetic fi elds causes a significant reduction in resistivity and hence a giant magnet oresistance which increases smoothly with lowering temperature. These obser vations suggest a fundamentally different conduction mechanism from that in the double-exchange perovskite oxides.