In-plane resistivity and an explanation for the characteristic T* in high-T-c cuprates

Citation
Ga. Levin et Kf. Quader, In-plane resistivity and an explanation for the characteristic T* in high-T-c cuprates, PHYS REV B, 62(17), 2000, pp. 11879-11887
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
17
Year of publication
2000
Pages
11879 - 11887
Database
ISI
SICI code
0163-1829(20001101)62:17<11879:IRAAEF>2.0.ZU;2-C
Abstract
We offer an explanation for the observed crossover temperature T* in in-pla ne resistivity rho (ab) of biplanar high-T-c cuprates. The key to our pictu re is the existence of nondegenerate and degenerate carriers possessing dif ferent quasiparticle relaxation rates. In the underdoped regime the change of slope d rho (ab)/dT at T* results from the thermal activation of nondege nerate carriers. In the overdoped regime, the nondegenerate carriers tend t o become degenerate and a second small Fermi energy emerges, resulting in a change to T-2 behavior in rho (ab) at low T. We compare our results with d ata on several compounds. We also find an approximate scaling in conductivi ty.