Dislocated epitaxial islands

Dislocation networks observed in CoSi2 islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calcula tions make use of the fact that image forces play a relatively minor role c ompared to line tension forces and dislocation-dislocation interactions. Re markable agreement is achieved, demonstrating that this approach can be app lied more generally to study dislocations in other mesostructures.