Optical field-induced mass transport in As2S3 chalcogenide glasses

Citation
A. Saliminia et al., Optical field-induced mass transport in As2S3 chalcogenide glasses, PHYS REV L, 85(19), 2000, pp. 4112-4115
Citations number
21
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
19
Year of publication
2000
Pages
4112 - 4115
Database
ISI
SICI code
0031-9007(20001106)85:19<4112:OFMTIA>2.0.ZU;2-V
Abstract
We report the observation of a photorefractivelike nonlinearity responsible for the formation of giant relief modulations in amorphous semiconductor g lasses. The photoinduced softening of the matrix, formation of defects with enhanced polarizability, and their drift under the optical field gradient force is believed to be the origin of the mass transport.