Surface passivation of crystalline silicon solar cells: A review

In the 1980s, advances in the passivation of both cell surfaces led to the first crystalline silicon solar cells with conversion efficiencies above 20 %. With today's industry trend towards thinner wafers and higher cell effic iency, the passivation of the front and rear surfaces is now also becoming vitally important for commercial silicon cells. This paper presents a revie w of the surface passivation methods used since the 1970s, both on laborato ry-type as well as industrial cells. Given the trend towards lower-cost (bu t also lower-quality) Si materials such as block-cast multicrystalline Si, ribbon Si or thin-film polycrystalline Si, the most promising surface passi vation methods identified to date are the fabrication of a p-n junction and the subsequent passivation of the resulting silicon surface with plasma si licon nitride as this material, besides reducing surface recombination and reflection losses, additionally provides a very efficient passivation of bu lk defects. Copyright (C) 2000 John Wiley & Sons, Ltd.