Our unique, high-efficiency c-Si solar cell, named the HIT cell, has shown
considerable potential to improve junction properties and surface passivati
on since it was first developed. The improved properties in efficiency and
temperature dependence compared to conventional p-n diffused c-Si solar cel
ls are featured in HIT power 21(TM) solar cell modules and other applicatio
ns which are now on the market. In the area of research, further improvemen
t in the junction properties of the a-Si/c-Si heterojunction has been exami
ned, and the highest efficiency to date of 20.1% has recently been achieved
for a cell size of 101 cm(2). The high open circuit voltage exceeding 700
mV, due to the excellent surface passivation of the HIT structure, is respo
nsible for this efficiency. In this paper, recent progress in HIT cells by
Sanyo will be introduced. Copyright (C) 2000 John Wiley & Sons, Ltd.