HIT (TM) cells - High-efficiency crystalline Si cells with novel structure

Citation
M. Taguchi et al., HIT (TM) cells - High-efficiency crystalline Si cells with novel structure, PROG PHOTOV, 8(5), 2000, pp. 503-513
Citations number
19
Categorie Soggetti
Environmental Engineering & Energy
Journal title
PROGRESS IN PHOTOVOLTAICS
ISSN journal
10627995 → ACNP
Volume
8
Issue
5
Year of publication
2000
Pages
503 - 513
Database
ISI
SICI code
1062-7995(200009/10)8:5<503:H(C-HC>2.0.ZU;2-C
Abstract
Our unique, high-efficiency c-Si solar cell, named the HIT cell, has shown considerable potential to improve junction properties and surface passivati on since it was first developed. The improved properties in efficiency and temperature dependence compared to conventional p-n diffused c-Si solar cel ls are featured in HIT power 21(TM) solar cell modules and other applicatio ns which are now on the market. In the area of research, further improvemen t in the junction properties of the a-Si/c-Si heterojunction has been exami ned, and the highest efficiency to date of 20.1% has recently been achieved for a cell size of 101 cm(2). The high open circuit voltage exceeding 700 mV, due to the excellent surface passivation of the HIT structure, is respo nsible for this efficiency. In this paper, recent progress in HIT cells by Sanyo will be introduced. Copyright (C) 2000 John Wiley & Sons, Ltd.