Comparison of the open circuit voltage of simplified PERC cells passivatedwith PECVD silicon nitride and thermal silicon oxide

Plasma enhanced chemical vapor deposited silicon nitride films have been us ed to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirm ed open circuit voltage age (V-oc) of 667 mV was measured, proving the outs tanding surface passivation provided by the silicon nitride films. The achi eved V-oc represents a significant improvement for all-SiN passivated silic on solar cells. A conversion efficiency of 17.8 was obtained. For compariso n, similar cells with different passivation schemes, including high quality , thermally grown TCA oxides and thin SiO2/SiN double layers, were also inv estigated. Open circuit voltages up to 673 mV and conversion efficiencies u p to 18.3% were achieved. Copyright (C) 2000 John Wiley & Sons, Ltd.