ENHANCED DIAMOND NUCLEATION ON PRETREATED SILICON SUBSTRATES

The nucleation and growth of diamond on two-step pretreated Si substra tes were studied. The diamond films were produced by hot-filament chem ical vapor deposition. The two-step pretreatment comprised coating the smooth Si substrate with a thin carbon film by electrolysis of methan ol solution, followed by 1 min ultrasonic treatment with diamond powde r. An enhanced diamond nucleation density as high as 2 X 10(9) cm(-2) was obtained, three orders of magnitude higher than that on single-ste p pretreated Si substrates. In addition, rapid diamond nucleation on t he pretreated Si substrate was observed. Explanations are given for th e experimental results and a scheme of the kinetic process of nucleati on is proposed.