MODIFICATION OF DIAMOND FILMS BY HIGH-ENERGY ION IRRADIATION - TRACK CHANNELING AND ION CHARGE FLUCTUATION EFFECTS

Authors
FEDOTOV SA BYELI AV ZAITSEV AM VARICHENKO VS KAZYUTCHITS NM
Citation
Sa. Fedotov et al., MODIFICATION OF DIAMOND FILMS BY HIGH-ENERGY ION IRRADIATION - TRACK CHANNELING AND ION CHARGE FLUCTUATION EFFECTS, Thin solid films, 301(1-2), 1997, pp. 183-187
Citations number
18
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
301
Issue
1-2
Year of publication
1997
Pages
183 - 187
Database
ISI
SICI code
0040-6090(1997)301:1-2<183:MODFBH>2.0.ZU;2-7
Abstract
A model of ion implantation in diamond with an energy of 1 MeV per nuc leon is formulated taking into account the two effects: (i) ion channe lling through latent tracks, and (ii) ion charge state fluctuations on the basis of a set of the Boltzmann and Fokker-Planck transport equat ions. Comparison with the experimental data on the implantation of Ni and Xe ions in diamond leads to the conclusion that these effects are essential to the accurate calculation of the depth distributions of im purity and defects at the high energy ion implantation.