Etching pits and dislocations in Si{111}

The nature of etch pits that arise during anisotropic etching in KOH on Si{ 111} surfaces was investigated. It was verified that bulk stacking faults i n the crystal lattice give rise to deep etching pits. Other types of disloc ations, of which the nature is still unclear, were also found to be present , but these do not give rise to etching pits. (C) 2000 Elsevier Science B.V . All rights reserved.