Phase formation in aluminium implanted titanium and the correlated modification of mechanical and corrosive properties

Citation
I. Tsyganov et al., Phase formation in aluminium implanted titanium and the correlated modification of mechanical and corrosive properties, THIN SOL FI, 376(1-2), 2000, pp. 188-197
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
376
Issue
1-2
Year of publication
2000
Pages
188 - 197
Database
ISI
SICI code
0040-6090(20001101)376:1-2<188:PFIAIT>2.0.ZU;2-2
Abstract
Surface modification of titanium is of interest considering the necessary i mprovement of mechanical properties of this material for applications as, f or example, medical implants. This work is devoted to the formation of a la yer with a high content of the titanium aluminides Ti3Al and TiAl below the surface by high dose aluminium implantation. If the maximum aluminium conc entration exceeds 20 at.% precipitation of Ti3Al is detected by X-ray diffr action already in the as-implanted state. For maximum aluminium concentrati ons between 50 and 55 at.% the phase TiAl is found beside Ti3Al after annea ling at 70 degreesC. For a double implantation resulting in an aluminium co ncentration of approximately 60 at.% in the depth range between 100 and 200 nm a disordered fee TiAl phase is observed after implantation as precursor for the ordered tetragonal TiAl formed by subsequent annealing at 60 degre esC. The influence of a pre-implantation of 3 x 10(17) V cm(-2) on the phas e formation is also reported. The depth dependent maximum hardness in the n ear surface range increases with increasing Al dose up to a factor 4. Signi ficantly enhanced wear resistance is observed for Al doses greater than or equal to 10(18) cm(-2) after annealing. High dose implantation of Al into T i results in an enhanced corrosion in 5 M HCl. However, subsequent annealin g reduces the corrosion current compared to unimplanted Ti. (C) 2000 Elsevi er Science S.A. All rights reserved.