Effects of partial oxygen pressure on the crystal growth of PbTiO3 thin films on miscut (001)SrTiO3

Authors
Ichikawa, Y Adachi, H Ai, R Wasa, K
Citation
Y. Ichikawa et al., Effects of partial oxygen pressure on the crystal growth of PbTiO3 thin films on miscut (001)SrTiO3, VACUUM, 59(2-3), 2000, pp. 417-423
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
59
Issue
2-3
Year of publication
2000
Pages
417 - 423
Database
ISI
SICI code
0042-207X(200011/12)59:2-3<417:EOPOPO>2.0.ZU;2-G
Abstract
Single crystal PbTiO3 (PT) thin films were epitaxially grown on a miscut (0 0 1)SrTiO3 (ST) substrate by magnetron sputtering at different partial oxy gen pressures, At a low partial oxygen pressure, continuous PT thin films w ere grown under a step-flow growth. At a high partial oxygen pressure, the PT thin films showed an island structure. The partial oxygen pressure affec ted the film growth mode and modified the strain distribution of the result ant sputtered PT thin films. (C) 2000 Elsevier Science Ltd. All rights rese rved.