Influence of H2O partial pressure in the sputtering chamber on the crystallinity and relative dielectric constant of SrTiO3 thin film prepared at lowsubstrate temperature
O. Nakagawara et al., Influence of H2O partial pressure in the sputtering chamber on the crystallinity and relative dielectric constant of SrTiO3 thin film prepared at lowsubstrate temperature, VACUUM, 59(2-3), 2000, pp. 742-747
It has been investigated here how the crystallinity and relative dielectric
constant of low-temperature sputtered SrTiO3 film is influenced by H2O par
tial pressure in the deposition chamber, with increasing H2O partial pressu
re, the relative dielectric constant of SrTiO3 film prepared at a substrate
temperature of 280 degreesC tends to degrade, and the amorphous layer in t
he interface between bottom electrode and dielectric film increases in thic
kness observed in TEM images. H2O partial pressure and relative dielectric
constant can be estimated from in situ spectrum analysis of hydrogen in pla
sma emission. The monitoring and control of H2O partial pressure are necess
ary for the SrTiO3 deposition process to achieve stable dielectric properti
es, (C) 2000 Elsevier Science Ltd, All rights reserved.