TiO2-x sputter for high rate deposition of TiO2

Citation
Y. Tachibana et al., TiO2-x sputter for high rate deposition of TiO2, VACUUM, 59(2-3), 2000, pp. 836-843
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
59
Issue
2-3
Year of publication
2000
Pages
836 - 843
Database
ISI
SICI code
0042-207X(200011/12)59:2-3<836:TSFHRD>2.0.ZU;2-5
Abstract
A new sputter technique for high rate deposition of TiO2 was developed for applying to conventional planar magnetron DC sputter system. In this techni que, TiO2 films are deposited by using a plasma-sprayed TiO2-x target and A r sputter gas including a few percent of O-2 gas. The deposition rate effic iency (deposition rate per applied power density) was almost 8 limes larger than that of the conventional sputter method. This technique also has an a dvantage that there is no damage done to the under layer during the deposit ion. The Low-E coatings, being multi-stacks of Ag/TiO2, were obtained even in the case of no protective layer on Ag film and their optical properties were better than those of Low-E coatings including ZnO as the dielectric la yer, because of the high refractive index of TiO2. (C) 2000 Elsevier Scienc e Ltd. All rights reserved.