Modification of plasma membrane lipid order and H+-ATPase activity as partof the response of Saccharomyces cerevisiae to cultivation under mild and high copper stress
Ar. Fernandes et al., Modification of plasma membrane lipid order and H+-ATPase activity as partof the response of Saccharomyces cerevisiae to cultivation under mild and high copper stress, ARCH MICROB, 173(4), 2000, pp. 262-268
Plasma membrane lipid disorganization takes place in cells of Saccharomyces
cerevisiae grown under copper stress, as shown by fluorescence anisotropy
measurements with the lipid reporter probe 1,6-diphenyl-1,3,5-hexatriene. T
he extent of plasma membrane disorganization, presumably due to copper-indu
ced lipid peroxidation, was discontinuous when measured in cells sown in me
dia supplemented with different concentrations of CuSO4. Results suggested
the existence of adaptive mechanisms that cells employ to protect themselve
s against the deleterious effects of copper. The adaptive mechanisms examin
ed in this study included the coordinate increase in the activities of Cu,Z
n-superoxide dismutase (up to five-fold), glutathione reductase (up to 1.7-
fold): and plasma membrane H+-ATPase (up to threefold). These enzyme activi
ties showed maximal levels in cells grown with copper supplied at intermedi
ate concentrations, within the range that allowed growth. Significantly, at
these concentrations, plasma membrane disorganization did not increase whe
n increasing amounts of CuSO4 were supplied. However, at copper concentrati
ons close to the maximal that allowed growth, the capacity of the yeast cel
l response to cope with the deleterious effects of copper was exceeded; pla
sma membrane lipid organization and plasma-membrane-bound H+-ATPase activit
y drastically declined in response to the increased levels of copper stress
and the consequences on growth kinetics were even more severe. Our results
clearly suggest that modification of plasma membrane H+-ATPase activity is
either part of or the result of the global response of yeast to mild or hi
gh copper stress.