Proximity X-ray and extreme ultraviolet lithography

Present status and technical issues of proximity X-ray lithography (PXRL), especially synchrotron radiation (SR) lithography, and extreme ultraviolet lithography (EUVL) for use in the next generation lithography will be prese nted. To make SR lithography a practical method, many improvements in a wid e range of lithographic components have been made over the past several yea rs. These developments have been successfully applied to the fabrication te sting of LSIs. For widespread industrial use, the feasibility and cost-effe ctiveness in mass production should be guaranteed. On the other hand, since there is a strongly demand for EUVL as a main candidate for the nodes of 7 0 and 50 MI, global consortiums have been making intense efforts to develop key components of EUVL, such as multilayer mirror and masks, resist proces ses, and sources. To make EUVL a major tool, timing in development and cost of ownership should be critical issues. (C) 2000 Academie des sciences/Edi tions scientifiques et medicales Elsevier SAS.