In-situ atomic force microscopy of silicon(100) in aqueous potassium hydroxide

Citation
P. Raisch et al., In-situ atomic force microscopy of silicon(100) in aqueous potassium hydroxide, ELECTR ACT, 45(28), 2000, pp. 4635-4643
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
45
Issue
28
Year of publication
2000
Pages
4635 - 4643
Database
ISI
SICI code
0013-4686(2000)45:28<4635:IAFMOS>2.0.ZU;2-O
Abstract
Growth dynamics of pyramid-shaped features that emerge during etching of si licon(100) surfaces in 2 M aqueous potassium hydroxide solutions have been investigated using in-situ atomic force microscopy. Micropyramids were foun d to grow continuously from a scale-shaped structure that is present on the surface during etching. In addition, two characteristic removal mechanisms of fully developed pyramids could be identified. It is suggested that thes e etching mechanisms are unique to pyramids and not comparable to the etchi ng properties of single crystal surfaces. (C) 2000 Elsevier Science Ltd. Al l rights reserved.